Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel

Near-field cathodoluminescence studies on n-doped gallium nitride films

Field-effect transistors based on cubic indium nitride

Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transis...

Highly doped thin-channel GaN-metal–semiconductor field-effect transistors

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors ~MESFETs! grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5310 cm were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and max...

Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors

The breathtaking increase of the performance of integrated circuits was made possible by the continuing size miniaturization of semiconductor devices’ feature size. The 32nm MOSFET process technology [1] presently in manufacturing involves a sophisticated heavily strained silicon channel and a high-k dielectric/metal gate stack. Although alternative channel materials with a mobility higher than...

Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.

When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on gallium nitride (GaN), resulting in high-quality, unstrained, single-layer MoS2 with strict registry to the GaN lattice. These results present a p...